Modeling of interface reaction products with high-resolution core-level photoemission

Publisher Website
Google Scholar
Abstract
High-resolution photoemission studies make it possible to distinguish different atomic configurations at evolving interfaces by monitoring chemical shifts. Hence, it is possible to determine the coverage at which reactions are triggered and are effectively completed, the species that outdiffuses into the metal overlayer, and the bonding of surface-segregated species. Core-level deconvolutions and plots of the concentration of substrate, reacted, and segregated species as a function of coverage are discussed for Ce/Si(111), Ce/GaAs(110), and Cr/GaAs(110). Our results show that distinct Ce/As and Ce/Si species form but that no distinct Cr/Ga bonding configuration is established at the interface.

This publication has 0 references indexed in Scilit: