Apparent Size of an Atom in the Scanning Tunneling Microscope as a Function of Bias
- 5 January 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (1) , 45-48
- https://doi.org/10.1103/physrevlett.58.45
Abstract
In order to determine how the sample density of states is reflected in topographic images obtained in the scanning tunneling microscope, the apparent size of an adsorbed atom is studied as a function of bias voltage for several different atoms. This quantity is found to reflect state-density features that lie well above the Fermi level, but it shows a striking absence of any trace of -state peaks below the Fermi level.
Keywords
This publication has 9 references indexed in Scilit:
- Spectroscopy of single atoms in the scanning tunneling microscopePhysical Review B, 1986
- Interatomic Forces in Scanning Tunneling Microscopy: Giant Corrugations of the Graphite SurfacePhysical Review Letters, 1986
- Anomalous Corrugations in Scanning Tunneling Microscopy: Imaging of Individual StatesPhysical Review Letters, 1986
- Electronic structure and tunneling current for chemisorbed atomsIBM Journal of Research and Development, 1986
- Theory of Single-Atom Imaging in the Scanning Tunneling MicroscopePhysical Review Letters, 1986
- Energy-Dependent State-Density Corrugation of a Graphite Surface as Seen by Scanning Tunneling MicroscopyEurophysics Letters, 1986
- Vacuum tunneling current from an adsorbed atomPhysical Review Letters, 1985
- Theory of the scanning tunneling microscopePhysical Review B, 1985
- Tunnelling from a Many-Particle Point of ViewPhysical Review Letters, 1961