Mobility and saturation drift velocity enhancementin highlydoped GaAs and In x Ga 1– x As structures designed for use inpower FET devices
- 29 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (5) , 494-496
- https://doi.org/10.1049/el:19960300
Abstract
Edge delta-doping and compositional grading have been used to significantly improve electron transport characteristics in AlxGa1–xAs/GaAs and InyAl1–yAs/InxGa1–xAs quantum well structures. Improvements of 100% in mobility μ (to 2300 cm2/Vs) and 67% in saturation drift velocity vs (to 1.77 × 107 cm/s) have been achieved. The dependence of vs on μ has been determined as vs ∝ μ0.8±0.4.Keywords
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