Optical properties of GaInAs/AlInAs single quantum wells
- 15 October 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (8) , 762-764
- https://doi.org/10.1063/1.94497
Abstract
Ga0.47In0.53As/Al0.48In0.52As single quantum wells grown by molecular beam epitaxy have exhibited photoluminescence emission from 9668 Å to the 1.55-μm bulk emission at 4 K. The emission at 9668 Å is 0.474 eV above the band gap of GaInAs. The single quantum well (SQW) is 15 Å wide which is the narrowest SQW reported in any III-V compound. The effect of varying the buffer layer of the SQW on the photoluminescence intensity of a 65-Å single quantum well is studied.Keywords
This publication has 2 references indexed in Scilit:
- GaInAs–AlInAs heterostructures for optical devices grown by MBEJournal of Vacuum Science & Technology B, 1983
- Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double-heterostructure lasers grown by molecular-beam epitaxy with lasing wavelength at 1.65 μmJournal of Applied Physics, 1981