Surface state density variations on MOS structures due to gamma radiation

• 1 January 1965
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 53  (11) , 1748
• https://doi.org/10.1109/PROC.1965.4365

Abstract

Keywords

• GAMMA RAYS
• CAPACITANCE
• SILICON
• VOLTAGE
• LABORATORIES
• SURFACE IMPEDANCE
• FREQUENCY DEPENDENCE
• EQUATIONS
• FREQUENCY RESPONSE
• CONDUCTIVITY