Characterization of GaAs/AlxGa1−xAs selective reactive ion etching in SiCl4/SiF4 plasmas
- 1 November 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (6) , 1956-1959
- https://doi.org/10.1116/1.584882
Abstract
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