dc Electroluminescence and Related Properties in Evaporated Thin Films of ZnS (Cu, Mn, Cl)

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Abstract
Properties of d c electroluminescence(EL) are studied for two groups of films, one evaporated at rather low temperatures (below 230°C, denoted as film-L) and the other at high temperatures (above 230°C, also denoted as film-H). In sandwich cell, stable EL emission is obtained when the counter electrode is negative for film-L, and positive for film-H. Photovoltage appears with the opposite sign for the film-L and film-H. From the observation of photoluminescence (PL) and EL for the sandwich cell and two types of gap cell (underlying and overlying electrode types), the relations between activator distribution and EL emission are obtained. The emitting portions are found different for the gap cell between the film-L and film-H by microscopic observation. Hole injection mechanism is proved to be predominant in both groups. The same experiments are made for the films doped with activators by “Embedding method.”

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