Atomistic calculation of the self-interstitial diffusivity in silicon
- 11 January 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (2) , 172-174
- https://doi.org/10.1063/1.109361
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Temperature dependence of thermodynamic quantities from simulations at a single temperaturePhysical Review Letters, 1991
- Semiempirical modified embedded-atom potentials for silicon and germaniumPhysical Review B, 1989
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Phase diagram of silicon by molecular dynamicsPhysical Review B, 1987
- Molecular-dynamics study of self-interstitials in siliconPhysical Review B, 1987
- Point defects, diffusion processes, and swirl defect formation in siliconApplied Physics A, 1985
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- Electronic structure and total-energy migration barriers of silicon self-interstitialsPhysical Review B, 1984
- Theory of electronically stimulated defect migration in semiconductorsPhysical Review B, 1984
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984