Generalized Einstein relation for disordered semiconductors - implications for device performance

Preprint

3 February 2004

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0109432

Abstract

The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasi-equilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic-materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel-width in field-effect transistors is discussed.

Keywords

All Related Versions

Version 1, 2001-09-24, ArXiv
Version 2, 2004-02-03, ArXiv
Published version: Applied Physics Letters, 80 (11), 1948.

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