Bonding of silicon to silicon by solid-phase epitaxy
- 15 April 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (8) , 3118-3120
- https://doi.org/10.1063/1.337816
Abstract
Using concepts of solid-phase epitaxy, a sealed and structurally sound bond between two silicon wafers has been achieved with aluminum, platinum silicide, or germanium as the transport medium. Only in the case of aluminum did microprobe analysis show an interface clear of the bonding medium. The bond quality was tested by bonding wafers of different crystal orientation and then intentionally cleaving and fracturing the bonded wafers. A clean fracture was obtained without the wafers falling apart. Leak test of sealed cavities suggests that a hermetically sealed enclosure can be achieved with this technique.This publication has 6 references indexed in Scilit:
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