Electrochemistry of Gold Deposition on n-Si(100)

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Abstract
The electrochemical deposition of gold on n‐type silicon from solutions was investigated by performing a detailed study of the nucleation and growth kinetics. Deposition occurs by progressive nucleation and diffusion‐limited growth of three‐dimensional hemispherical islands over a wide range of potentials and concentrations. It is shown that for a silicon/gold electrode, the applied potential is dropped over the silicon/gold interface at potentials more positive than 0 V, while at potentials more negative than 0 V, the applied potential is dropped over the Helmholtz layer at the gold/solution interface. The influence of these observations on the applicability of nucleation models derived for metal‐on‐metal deposition to metal deposition onto semiconductors is discussed. © 2000 The Electrochemical Society. All rights reserved.

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