Temperature dependence of the fundamental energy gap in GaAs
- 30 September 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 59 (12) , 797-802
- https://doi.org/10.1016/0038-1098(86)90632-0
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Temperature dependence of the fundamental edge of germanium and zinc-blende-type semiconductorsPhysical Review B, 1975
- Temperature dependence of the band gap and comparison with the threshold frequency of pure GaAs lasersJournal of Applied Physics, 1975
- Temperature Dependence of Energy Gaps of Some III-V SemiconductorsPhysical Review B, 1972
- Temperature Dependence of the Energy Gap in GaAsPhysical Review B, 1971
- Temperature Dependence of the Wavelength-Modulation Spectra of GaAsPhysical Review Letters, 1970
- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- On the theory of temperature shift of the absorption curve in non-polar crystalsCzechoslovak Journal of Physics, 1955
- Temperature Dependence of the Energy Gap in SemiconductorsPhysical Review B, 1951