Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements
- 1 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 59-61
- https://doi.org/10.1063/1.91316
Abstract
The epitaxial crystallization rate of UHV‐deposited amorphous silicon is shown to be 1–2 orders of magnitude lower than the rate reported for ion implanted amorphous layers. The rate of growth is a function of depth, decreasing towards the layer surface. Crystallization is inhibited in samples exposed to air at room temperature. Results indicate that gases migrate at least 1000 Å into deposited films and thus suggest that voids are interconnected by microscopic pores.Keywords
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