Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
- 17 January 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (2) , 72-74
- https://doi.org/10.1049/el:19800053
Abstract
The effect on threshold current density Jth of the use of an air-lock sample-exchange mechanism, substrate preparation and Al source purity was investigated for GaAs-Al0.27 Ga0.73 As double-heterostructure lasers grown by molecular-beam epitaxy (m.b.e.). The conditions necessary to prepare m.b.e. wafers that give Jth as low as for wafers prepared by liquid-phase epitaxy (Jth ≈ 1 × 103 A/cm2 for an active layer thickness of 0.1 μm) are summarised.Keywords
This publication has 1 reference indexed in Scilit:
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975