Crystal Habits of GaAs and GaP Grown from the Vapor Phase
- 1 September 1962
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (9) , 2840-2842
- https://doi.org/10.1063/1.1702561
Abstract
GaAs grown from the vapor phase is found, at near equilibrium, to form nearly spherical crystals bounded by {111} and {110} faces. Under nonequilibrium conditions whiskers are formed which on etching can be made to reveal structure.This publication has 7 references indexed in Scilit:
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