GaAsGaAlAs heterojunction transistor for high frequency operation
- 31 December 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (12) , 1339-1343
- https://doi.org/10.1016/0038-1101(72)90127-x
Abstract
No abstract availableKeywords
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- On the Preparation of High Purity Gallium ArsenideJournal of Applied Physics, 1962
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962