Low-temperature epitaxy of Si and Ge by direct ion beam deposition

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Abstract
Amorphous, polycrystalline, and epitaxial thin films of Si and Ge have been grown by ion beam deposition (IBD) under ultrahigh-vacuum conditions. IBD involves the direct deposition of ions onto single-crystal substrates from mass- and energy-analyzed beams with energies of 10 to 200 eV. The IBD films were characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning were studied. Differences in the formation of epitaxial thin films on p- and n-type Si substrates were observed with n− Si showing better epitaxy at low temperatures. Epitaxial overlayers which showed good minimum yields by ion channeling (3%–4%) have been produced at temperatures as low as 375 °C for Ge on Ge(100) and Si on Si(100).

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