High transconductance selfaligned WSi gate AIInAs/GaInAs HIGFETs grown by MOCVD

30 July 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (16) , 1494-1495
https://doi.org/10.1049/el:19920949

Abstract

HIGFETs were fabricated using an AIInAs/GaInAs hetero-structure grown by MOCVD. The 1 μm-gate HIGFET showed a maximum transconductance of 740mS/mm at room temperature, which is the highest transconductance obtained for HIGFETs. The reduction of the AIInAs layer thickness to 30nm and the low source resistance are the primary reasons for this enhancement.

Keywords

TRANSCONDUCTANCE
ALINAS LAYER THICKNESS
740 MS
30 NM
LOW SOURCE RESISTANCE
GATE LENGTH
ALINAS-GAINAS HETEROSTRUCTURE
MOCVD GROWTH
WSI GATE
1 MICRON
HIGFETS
SELF ALIGNED TRANSISTOR

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