119Sn Mössbauer study of the implantation behaviour of119In,119Sn,119mSn,119Sb and119mTe ions in SiC
- 1 April 1985
- journal article
- research article
- Published by Springer Nature in Hyperfine Interactions
- Vol. 23 (1) , 17-42
- https://doi.org/10.1007/bf02060136
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy ofdefect structures from implantations of radioactive telluriumPhysical Review B, 1980
- Radiation defects in ion-implanted silicon. I. Mössbauer spectroscopy ofdefect structures from implantations of radioactive antimonyPhysical Review B, 1980
- Lattice dynamics of substitutionalin silicon, germanium, and-tinPhysical Review B, 1980
- Applications of Parallel-Plate Avalance Counters in Mössbauer SpectroscopyPublished by Springer Nature ,1976
- Magneto-optical measurements on H-implantedSiCPhysical Review B, 1974
- Photoluminescence of H- and D-implantedSiCPhysical Review B, 1974
- Luminescence centers in H- and D-implanted6HSiCPhysical Review B, 1974
- Efficient Luminescence Centers in H- and D-ImplantedSiCPhysical Review B, 1973
- Photoluminescence of Radiation Defects in Ion-ImplantedSiCPhysical Review B, 1972
- Photoluminescence of Radiation Defects in Cubic SiC: Localized Modes and Jahn-Teller EffectPhysical Review B, 1971