An Investigation of the Compound Silicon Boride (SiB[sub 6])
Open Access
- 1 January 1959
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 106 (4) , 322-325
- https://doi.org/10.1149/1.2427339
Abstract
Single crystals of the compound silicon hexaboride have been prepared. Laue, rotation, and Weissenberg photographs indicate an orthorhombic cell with lattice parameters , , and . The pycnometer density is 2.43 g/cm3. The average electrical resistivity of single crystals, based on a probe technique, is 0.2 ohm‐cm. The melting point is 1950°C. has a Knoop hardness, with a 100‐g load, of 1910 kg/mm2.Keywords
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