Tunnel diodes
- 1 January 1960
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 7 (1) , 1-9
- https://doi.org/10.1109/t-ed.1960.14584
Abstract
This paper presents a review of the properties, principle of operation, and implications of the tunnel diode. Following a brief description of the unusual characteristics of this device, a discussion is given of the mechanism which leads to the negative resistance. Experiments showing the transition from the tunnel diode characteristic to that of a high-voltage avalanche diode are exhibited. The electrical characteristics of tunnel diodes are outlined making use of the small-signal equivalent circuit which represents the behavior in the negative resistance region. Diodes designed for high-frequency operation are described and examples are given of circuits which demonstrate their behavior as switches, radio receivers, and microwave oscillators. In connection with a discussion of the temperature dependence of these devices, experiments are described which demonstrate the importance of phonons in determining their characteristics at the temperature of liquid heliumKeywords
This publication has 1 reference indexed in Scilit:
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958