RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS

1 October 1981

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 42 (C4) , C4-587
https://doi.org/10.1051/jphyscol:19814128

Abstract

Time-resolved luminescence experiments have been carried out in a-Si : H. The results are interpreted on the basis of a model calculation in which radiative recombination of trapped electron-hole pairs is taken into account as well as nonradiative recombination at dangling bond centres

Keywords

RECOMBINATION PROCESSES
LUMINESCENCE
SILICON
TIME RESOLVED
HYDROGENATED AMORPHOUS
PROCESSES AND GAP

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