On the electron-hole plasma phase transition in direct and indirect gap semiconductors
- 12 November 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 74 (3-4) , 250-252
- https://doi.org/10.1016/0375-9601(79)90785-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Treatment of the electron–hole droplet nucleation in the Fokker‐Planck approximationPhysica Status Solidi (b), 1979
- Linear optical response of highly excited semiconductors electron–hole liquid in CdSPhysica Status Solidi (b), 1979
- The Electron-Hole Liquid in Semiconductors: Experimental AspectsPublished by Elsevier ,1978
- Direct determination of reduced band gap and chemical potential in an electron-hole plasma in high-purity GaAsSolid State Communications, 1976
- Electron–Hole Droplet Formation Kinetics in Pure GermaniumPhysica Status Solidi (b), 1976
- Nucleation Phenomena in Electron‐Hole Drop Formation in Ge and Si: I. Nucleation RatesPhysica Status Solidi (b), 1976
- On the condensation of electron-hole dropletsPhysics Letters A, 1976
- Charge on an electron-hole dropPhysical Review B, 1974