High power 4H-SiC static induction transistors
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 353-356
- https://doi.org/10.1109/iedm.1995.499213
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- Growth of large SiC single crystalsJournal of Crystal Growth, 1993
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975