Strong-field effect in nanofabrication on chemically prepared silicon
- 1 May 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (9) , 4721-4723
- https://doi.org/10.1063/1.352746
Abstract
We investigate the uniformity of scanning tunneling microscope nanofabrication on as‐prepared chemically etched silicon. Our results show that continuous fabrication produces isolated nanoscale dots along the motion of the tip rather than uniform lines. These results are discussed with the aid of a self‐limiting strong‐field effect.This publication has 5 references indexed in Scilit:
- Tunneling spectroscopy of the Si(111)2 × 1 surfacePublished by Elsevier ,2002
- Nanolithography of chemically prepared Si with a scanning tunneling microscopeApplied Physics Letters, 1991
- Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in airApplied Physics Letters, 1990
- Direct writing of 10 nm features with the scanning tunneling microscopeApplied Physics Letters, 1988
- Contact electrification of polymers: A quantitative modelJournal of Applied Physics, 1978