Uniaxial stress apparatus for deep level transient spectroscopy studies
- 1 February 1984
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 55 (2) , 210-212
- https://doi.org/10.1063/1.1137725
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Symmetry determination for deep states in semiconductors from stress-induced dichroism of photocapacitanceJournal of Applied Physics, 1983
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of DonorsPhysical Review B, 1972
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961