Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 275-278
- https://doi.org/10.1016/0022-0248(92)90402-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Gas source silicon molecular beam epitaxy using silaneApplied Physics Letters, 1987
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Etching of SiO2 Films by Si in Ultra-High VacuumJapanese Journal of Applied Physics, 1982