High temperature characterization of SiC BJTs for power switching applications
- 22 June 2006
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 50 (6) , 1073-1079
- https://doi.org/10.1016/j.sse.2006.05.004
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 1000-V, 30-A 4H-SiC BJTs with high current gainIEEE Electron Device Letters, 2005
- 3.6 m cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applicationsIEE Proceedings - Circuits, Devices and Systems, 2004
- 1800 V NPN bipolar junction transistors in 4H-SiCIEEE Electron Device Letters, 2001
- Thermal stability of IGBT high-frequency operationIEEE Transactions on Industrial Electronics, 2000