Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 667-670
- https://doi.org/10.1063/1.90458
Abstract
The conduction‐ and valence‐band discontinuities for the (110) GaAs‐Ge heterojunction have been measured as ΔEc=0.50 eV and ΔEv=0.25 eV by the angle‐resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett et al.Keywords
This publication has 16 references indexed in Scilit:
- Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAsPhysical Review Letters, 1978
- Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bendingPhysical Review B, 1976
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Prediction of semiconductor heterojunction discontinuities from bulk band structuresJournal of Vacuum Science and Technology, 1976
- Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAsPhysical Review Letters, 1975
- Photoemission studies of the GaAs-Cs interfacePhysical Review B, 1975
- The probing depth in photoemission and auger-electron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- Many-body effects at metal-semiconductor junctions. I. Surface plasmons and the electron-electron screened interactionJournal of Physics C: Solid State Physics, 1972
- Theory of Surface StatesPhysical Review B, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947