Optically controlled GaAs MMIC switch using a MESFET as an optical detector
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 941-944 vol.2
- https://doi.org/10.1109/mwsym.1990.99733
Abstract
The optical control of an MMIC (monolithic microwave integrated circuit) switch by a MESFET photodetector is presented along with a novel model of the illuminated MESFET, which serves as a tool to optimize the switch's performance. The wavelength dependence of the response is emphasized, since it influences the relative contribution of the photovoltaic and photoconductive effects. A theoretical analysis accurately predicting the photocurrents in MESFETs operated in the pinched-off mode is presented. The analysis includes photovoltaic and photoconductive effects.Keywords
This publication has 7 references indexed in Scilit:
- Phase and gain control of a GaAs MMIC transmit-receive module by optical meansPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Photoavalanche effects in a GaAs MESFETMicrowave and Optical Technology Letters, 1990
- Optical gain control of a GaAs MMIC distributed amplifierMicrowave and Optical Technology Letters, 1988
- Transit-time photoconductivity in high-field FET channelsIEEE Transactions on Electron Devices, 1987
- Analysis of Optically Controlled Microwave/Millimeter-Wave Device StructuresIEEE Transactions on Microwave Theory and Techniques, 1986
- Optical Control of GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1983
- Initial observations of optical injection locking of GaAs metal semiconductor field effect transistor oscillatorsApplied Physics Letters, 1981