Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates
- 20 April 1987
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0796, 27-32
- https://doi.org/10.1117/12.940992
Abstract
Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates, subjected to various types of annealing, exhibit a substantial reduction in dislocation density near the interface and in the bulk of the epitaxial layer. Different kinds of annealing are examined, ex-situ annealing which is done in a furnace after the growth and in-situ annealing which is done during the growth.Keywords
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