Infrared Photoconductive Characteristics of Boron-Doped Germanium
- 1 October 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (10) , 2965-2970
- https://doi.org/10.1063/1.1713139
Abstract
Boron‐doped germanium having very low levels of compensation is shown to be useful for detection of far infrared radiation in the 50–125 μ range. The results of measurements of time constant, dc characteristics, photoresponse, and spectral response of several Ge(B) detectors is presented and discussed. Detectors having a peak detectivity of 2.1×1011 cm‐cps½‐W−1 at 108 μ and a low dynamic impedance have been achieved. The cross section for the capture of a free hole by an ionized boron impurity in germanium at 4.2°K, about 4×10–11cm2, is significantly larger than the corresponding cross section for n‐type impurities in germanium.This publication has 9 references indexed in Scilit:
- Cascade Capture of Electrons by Ionized ImpuritiesPhysical Review B, 1964
- Carrier generation and recombination processes in copper-doped germanium photoconductorsJournal of Physics and Chemistry of Solids, 1962
- Electrical Conduction in-Type Germanium at Low TemperaturesPhysical Review B, 1962
- Recombination processes in far infrared photoconductorsJournal of Physics and Chemistry of Solids, 1961
- Recombination of Electrons and Donors in-Type GermaniumPhysical Review B, 1961
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Optical and Magneto-Optical Absorption Effects of Group III Impurities in GermaniumPhysical Review Letters, 1959
- Impact ionization of impurities in germaniumJournal of Physics and Chemistry of Solids, 1957
- Optical and Impact Recombination in Impurity Photoconductivity in Germanium and SiliconPhysical Review B, 1955