Temperature control during chemical vapor deposition of polycrystalline silicon with substrate heating by microwaves
- 14 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (24) , 3153-3155
- https://doi.org/10.1063/1.109112
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A uniformity degradation mechanism in rapid thermal chemical vapor depositionApplied Physics Letters, 1992
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Spectral Emissivity of SiliconJapanese Journal of Applied Physics, 1967