Comments on the steady state photocarrier grating technique to measure diffusion lengths
- 1 June 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (11) , 5727
- https://doi.org/10.1063/1.350512
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Phototransport under the presence of a small steady-state photocarrier gratingPhysical Review B, 1990
- Ambipolar diffusion length measurements on hydrogenated amorphous silicon p-i-n structuresApplied Physics Letters, 1988
- Self-consistency and self-sufficiency of the photocarrier grating techniqueApplied Physics Letters, 1988
- Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAsJournal of Applied Physics, 1987