Synthesis and characterization of zinc thin films formed in a glow discharge

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Abstract
The synthesis of continuous pinhole-free, mirrorlike, thin (<2000 Å) crystalline zinc films is affected by introducing diethyl zinc vapor into an inductively coupled, rf glow discharge reactor. The deposition rate profile of films formed on the back sides of the glass substrates is strongly correlated with the shape of the plasma waves, which in turn is dependent upon the reactor operating parameters, in particular the ratio of power to the initial system pressure, W/P0. Those Zn films which are highly reflective and exhibit sharp x-ray diffraction spectra appear to be virtually free of carbon when examined by Auger–ESCA spectroscopy. Sheet electrical conductivities of these films exhibit values approaching those of bulk metal zinc, namely, 104Ω−1 cm−1.

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