Standard relationships in the properties of Hg1−xCdxTe

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Abstract
There have been significant variations in the reported properties of the Hg1−xCdxTe family of materials prepared at different laboratories since the discovery of its infrared detecting properties in the late 1950s. Such variations can be a result of the growth processes, the measurement techniques, and the standard relationships used. The objective of this paper is to present selected standard relationships that can be used to interrelate Hg1−xCdxTe material and device properties. High-quality Honeywell melt-grown bulk Hg1−xCdxTe was used as the standard reference material for several of the relationships. The specific relationships discussed are 1% absolute transmission cut-on versus alloy composition x, electron mobility (77 and 300 K) versus x, electron concentration (77 and 300 K) versus x, electrical resistivity (300 K) versus x, energy gap versus x and temperature, cutoff wavelength versus x and temperature, lattice constant versus composition, and density versus x.

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