Improvement of interface electronic properties of GaF3/GaAs MIS structures

Publisher Website

1 January 1992

journal article
Published by Elsevier in Applied Surface Science

Vol. 56-58, 888-893
https://doi.org/10.1016/0169-4332(92)90355-2

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Electrical Properties of Gallium Fluoride(GaF₃)/GaAs Interface with and without Sulfur Treatment
Japanese Journal of Applied Physics, 1990
The Effect of (NH₄)₂S Treatment on the Interface Characteristics of GaAs MIS Structures
Japanese Journal of Applied Physics, 1988