High Precision Measurements of the Quantized Hall Resistance at the PTB

1 June 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement

Vol. IM-34 (2) , 304-305
https://doi.org/10.1109/tim.1985.4315330

Abstract

Quantized Hall resistances in GaAs-GaAlAs heterostructures and Si MOSFET's have been investigated. The influence of the sample temperature, the step number, and the material was found to be less than 3 parts in 108.

Keywords

ELECTRICAL RESISTANCE MEASUREMENT
RESISTORS
MAGNETIC FIELD MEASUREMENT
TEMPERATURE
MAGNETIC MATERIALS
CIRCUITS
MEASUREMENT STANDARDS
CONDUCTING MATERIALS
VOLTMETERS
MAGNETIC FIELDS

This publication has 1 reference indexed in Scilit:

New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
Physical Review Letters, 1980