Outmigration of gallium from Au-GaAs interfaces

27 November 1975

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 11 (24) , 574-575
https://doi.org/10.1049/el:19750440

Abstract

Experimental evidence is presented which suggests that the degradation of Au-GaAs Schottky-barriers after annealing is due to the outmigration of gallium into the gold, resulting in the formation of an n⁺ region beneath the contact.

Keywords

SCHOTTKY BARRIERS
AUGAAS INTERFACES
OUTMIGRATION
N+ REGION
ANNEALING