Stabilized 12 GHz MIC Oscillators using GaAs FET's

Abstract
This paper describes low power oscillators principally intended for use in MIC mixer applications. The circuits are fabricated with Plessey GAT 3 and NEC (Nippon) V244 FET's suitably packaged for use with microstrip substrates. The oscillators have been stabilized using a TE012 cavity coupled to the microstrip through an aperture in the microstrip ground plane, or alternatively by means of a solid dielectric resonator on the surface of the substrate. Very good noise performance and temperature stability have been measured. The injection-locking behaviour of the oscillators has also been studied.

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