Pulse generation in planar Gunn devices with varying nL product

20 April 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (8) , 203-205
https://doi.org/10.1049/el:19720148

Abstract

Measurements of the current reduction in planar Gunn devices by domain nucleation are reported. The devices were made of epitaxially grown GaAs layers. The measurements showed a decrease of the current reduction, relative to the threshold current I_th, with decreasing nL product, beginning at about nL = 10¹³ cm⁻², where n is the electron concentration and L is the length of active channel.

Keywords

GUNN DEVICES
PULSE AMPLIFICATION
HIGH SPEED DIGITAL TECHNIQUES
DOMAIN NUCLEATION
PULSE GENERATORS
GAAS

This publication has 0 references indexed in Scilit: