Silicon on insulator material technology

6 July 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (14) , 1201-1202
https://doi.org/10.1049/el:19950805

Abstract

A silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen. The basic phenomena, and the first physical and electrical characterisations are discussed briefly.

Keywords

SILICON ON INSULATOR MATERIAL TECHNOLOGY
MICROSLICING
WAFER BONDING
SI:H
HEAT TREATMENT
HYDROGEN IMPLANTATION
ELECTRICAL CHARACTERISATION

This publication has 2 references indexed in Scilit:

Radiation Damage of 50–250 keV Hydrogen Ions in Silicon
Published by Springer Nature ,1977
Plasma Contamination and Wall Erosion in Thermonuclear Reactors
IEEE Transactions on Nuclear Science, 1971