Reflection Spectra of CuInSe₂ from 2 to 100 eV

1 November 1987

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 26 (11A) , L1828
https://doi.org/10.1143/jjap.26.l1828

Abstract

We report, for the first time, reflectivity up to 100 eV of the chalcopyrite semiconductor CuInSe₂ using synchrotron radiation. P-like partial densities of states in the conduction band are identified from the sharp structures at 18 to 22 eV. These structures originate due to the transitions from the In 4d _5/2 core level to the conduction band.

Keywords

DENSITY OF STATE
SYNCHROTRON RADIATION

This publication has 3 references indexed in Scilit:

Preparation and some properties of CuInSe2 single crystals
Solar Cells, 1986
Photoluminescence and photoconductivity of ${CuInSe}_{2}$
Physical Review B, 1985
Optical properties of the chalcopyrite semiconductors ZnGe $P_{2}$ , ZnGe ${As}_{2}$ , CuGa $S_{2}$ , CuAl $S_{2}$ , CuIn ${Se}_{2}$ , and AgIn ${Se}_{2}$
Physical Review B, 1977

Reflection Spectra of CuInSe2 from 2 to 100 eV

Abstract

Keywords

Reflection Spectra of CuInSe₂ from 2 to 100 eV