Association of 2100 cm-1 infrared spectra with microstructure in hydrogenated amorphous silicon
- 30 September 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 71 (12) , 1127-1130
- https://doi.org/10.1016/0038-1098(89)90724-2
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Evidence for microstructure in glow discharge hydrogenated amorphous Si-C alloysSolar Cells, 1987
- Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloysApplied Physics Letters, 1987
- Disorder and defects in sputtered a-SiH from subgap absorption measurementsSolid State Communications, 1985
- Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous siliconSolid State Communications, 1983
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980
- Dissent from the dihydride model of the vibrational spectra of amorphous silicon-hydrogen alloysSolid State Communications, 1980
- Structural interpretation of the vibrational spectra of-Si: H alloysPhysical Review B, 1979
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Beiträge zur chemie des siliciums und germaniums, XXVI (1) ramanspektren des trisilans, der tetra-, penta-, hexasilane und des n-heptasilansInorganic and Nuclear Chemistry Letters, 1974