InGaAs/GaAs strained single quantum well characterization by high resolution X-ray diffraction
- 1 January 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 126 (1) , 144-150
- https://doi.org/10.1016/0022-0248(93)90235-o
Abstract
No abstract availableKeywords
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