Relationship between energy gap, refractive index, bond energy and the szigeti charge in polyatomic binary compounds and semiconductors
- 1 May 1993
- journal article
- research article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 54 (5) , 635-637
- https://doi.org/10.1016/0022-3697(93)90244-l
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Relationship between formula weight and the Szigeti charge in the II–VI and III–V semiconductorsJournal of Physics and Chemistry of Solids, 1988
- Bond ionicity and susceptibility in aIbIIIc2VI compoundsJournal of Physics and Chemistry of Solids, 1987
- Systematic variation of the Szigeti charge in compound semiconductorsPhysics Letters A, 1986
- Relations between the Refractive Index and Energy Gap of SemiconductorsPhysica Status Solidi (b), 1985
- Comments on the Moss FormulaPhysica Status Solidi (b), 1980
- On the Penn Gap in SemiconductorsPhysica Status Solidi (b), 1979
- Optical Properties of SomeAlloys Determined from Infrared Plasma Reflectivity MeasurementsPhysical Review B, 1972
- Effective Charges and IonicityPhysical Review Letters, 1971
- A relation between the binding energy and the band-gap energy in semiconductors of diamond or zinc-blende structureJournal of Physics and Chemistry of Solids, 1961
- Polarisability and dielectric constant of ionic crystalsTransactions of the Faraday Society, 1949