Optical and chemical analysis of the Ag In0.53Ga0.47As
- 30 November 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (11) , 1875-1878
- https://doi.org/10.1016/0038-1101(95)00010-q
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Temperature dependence of the electrical characteristics of Ag/In0.53Ga0.47As diodes formed at low temperatureSolid-State Electronics, 1994
- Barrier height enhancement of Schottky diodes on n-In0.53Ga0.47As by cryogenic processingApplied Physics Letters, 1993
- Metal/n-InP interfaces studied by photoreflectance and Raman spectroscopiesSolid-State Electronics, 1993
- Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structuresJournal of Applied Physics, 1991
- Electron transport of inhomogeneous Schottky barriersApplied Physics Letters, 1991
- Internal-stress effects on Raman spectra ofAs on InPPhysical Review B, 1988
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- GaAs metallization: Some problems and trendsJournal of Vacuum Science and Technology, 1981
- Raman scattering studies of surface space charge layers and Schottky barrier formation in InPJournal of Vacuum Science and Technology, 1979
- Chemical reaction and charge redistribution at metal–semiconductor interfacesJournal of Vacuum Science and Technology, 1978