Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
- 23 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (25) , 3407-3409
- https://doi.org/10.1063/1.119186
Abstract
Stress-induced leakage current (SILC) in ultrathin oxide metal–oxide–semiconductor devices has been quantitatively modeled by the trap-assisted tunneling mechanism. These results are compared with experimental data on samples with oxide thickness ranging from 40 to 80 Å. This model accurately describes the electric-field dependence of SILC, and also predicts the increase, then decrease in SILC, with decreasing oxide thickness, which is observed experimentally.Keywords
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