Electrostatic Discharge Protection in Linear Ics
- 1 August 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Consumer Electronics
- Vol. CE-31 (3) , 601-607
- https://doi.org/10.1109/TCE.1985.289976
Abstract
Damage due to electrostatic discharge (ESD) is one of the main causes of failure in the use of bipolar ICs. The principal failure mechanism is found to be short-circuiting of the B-E junction. A number of protection structures, realized with an 18V linear process, were characterized by testing them with a structure having a damage voltage, Vdam, lower than 400V. The Vdam of the protected structure is a good index of the quality of the protection structure and permits a comparison of the various solutions. Protection structures with Vdam in the range 3000V to 9000V are presented.Keywords
This publication has 1 reference indexed in Scilit:
- Effects of Electrostatic Discharge on Linear Bipolar Integrated CircuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977