InP microwave oscillations with 2-zone cathodes
- 21 August 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (17) , 402-403
- https://doi.org/10.1049/el:19750310
Abstract
A 2-zone cathode comprising a thin n+ region under a high-resistance contact improves the efficiency on transferred-electron oscillators. InP devices have shown high efficiency over a temperature range of −50 to +150°C.Keywords
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